(China (Mainland))
Product Summary
The STW8NK80Z is obtained through an extreme optimization of ST well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The STW8NK80Z is for switching applications.
Parametrics
STW8NK80Z absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 800 V; (2)VGS Gate- source voltage: ± 30 V; (3)ID Drain current (continuous) at TC = 25℃: 6.2A; (4)ID Drain current (continuous) at TC = 100℃: 3.9A; (5)IDM Drain current (pulsed): 24.8A; (6)PTOT Total dissipation at TC = 25℃: 140W; Derating factor: 1.12 W/℃; (7)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ): 4000 V; (8)dv/dt Peak diode recovery voltage slope: 4.5 V/ns; (9)VISO: 2500 V; (10)Tj, Max operating Junction temperature: -55 to 150 ℃.
Features
STW8NK80Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.
Diagrams
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 STW8NK80Z |
STMicroelectronics |
MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH |
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