(China (Mainland))
Product Summary
The JS28F256P33B95 is the latest generation of Intel StrataFlash memory device. Offered in 64-Mbit up through 1-Gbit densities, the JS28F256P33B95 device brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices.
Parametrics
JS28F256P33B95 absolute maximum ratings: (1)Temperature under bias:–40 to +85 ℃; (2)Storage temperature: –65 to +125 ℃; (3)Voltage on any signal (except VCC, VPP): –0.5 V to +4.1 V; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +4.1 V; (7)Output short circuit current: 100 mA.
Features
JS28F256P33B95 features: (1)High performance; (2)Multi-Level Cell Technology: Highest Density at Lowest Cost; (3)VCC (core) voltage: 1.7 V – 2.0 V; (4)Absolute write protection: VPP = VSS; (5)Power-transition erase/program lockout; (6)Individual zero-latency block locking; (7)Individual block lock-down; (8)Common Flash Interface capable; (9)64/128/256-Mbit densities in 56-Lead TSOP package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 JS28F256P33B95A |
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IC FLASH 256MBIT 95NS 56TSOP |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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JS28F00AM29EWH0 |
|
IC FLASH 1GBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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JS28F00AM29EWHA |
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IC FLASH 1GBIT M29EW 56TSOP |
Data Sheet |
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JS28F00AM29EWL0 |
|
IC FLASH 1GBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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JS28F00AM29EWLA |
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IC FLASH 1GBIT M29EW 56TSOP |
Data Sheet |
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JS28F00AP30BFA |
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IC FLASH 1GBIT P30 65NM 56TSOP |
Data Sheet |
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JS28F00AP30EF0 |
|
IC FLASH 1GBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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