(China (Mainland))
Product Summary
The BSP125 is a SIPMOS Power-Transistor.
Parametrics
BSP125 absolute maximum ratings: (1)Continuous drain current, ID: 0.12A; (2)Pulsed drain current, ID: 0.48; (3)Reverse diode dv/dt: 6 kV/μs; (4)Gate source voltage VGS: ±20 V; (5)ESD Class: 1A (>250V, <500V); (6)Power dissipation, Ptot: 1.8 W; (7)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.
Features
BSP125 features: (1)N-Channel; (2)Enhancement mode; (3)Logic Level; (4)dv/dt rated; (5)Pb-free lead plating; RoHS compliant; (6)Qualified according to AEC Q101.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BSP125 |
Other |
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Data Sheet |
Negotiable |
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BSP125 E6327 |
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MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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BSP125 E6433 |
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MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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BSP125 L6327 |
Infineon Technologies |
MOSFET SIPMOS PWR-TRNSTR |
Data Sheet |
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BSP125 L6433 |
Infineon Technologies |
MOSFET SIPMOS PWR-TRNSTR |
Data Sheet |
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